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PD - 97107A
IRLR8715CPBF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
G
HEXFET(R) Power MOSFET
VDSS
25V
RDS(on) max
9.4m:
D
Qg
6.9nC
G
D
S
D-Pak IRLR8715CPBF
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
25 20 51f 36 200 44 22 0.29 -55 to + 175 300 (1.6mm from case)
Units
V
A W W/C C
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case
h
Typ.
Max.
3.4 50 110
Units
C/W
Junction-to-Ambient (PCB Mount) Junction-to-Ambient
h
ghA
--- --- ---
Notes through are on page 10
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1
9/18/06
IRLR8715CPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
25 --- --- --- 1.35 --- --- --- --- --- 46 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 17 7.5 11.8 1.9 -7.0 --- --- --- --- --- 6.9 1.6 1.2 2.5 1.6 3.7 3.2 2.2 7.2 32 7.5 3.9 830 220 120 --- --- 9.4 14.8 2.35 --- 1.0 150 100 -100 --- 10 --- --- --- --- --- --- 3.8 --- --- --- --- --- --- --- pF VGS = 0V VDS = 13V = 1.0MHz ns nC nC VDS = 13V VGS = 4.5V ID = 17A See Fig.16 S nA V mV/C A V m
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 21A VGS = 4.5V, ID = 17A
mV/C Reference to 25C, ID = 1mA
e e
VDS = VGS, ID = 25A VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 17A
VDS = 10V, VGS = 0V VDD = 13V, VGS = 4.5Ve ID = 17A Clamped Inductive Load
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 27 17 4.4 Units mJ A mJ
--- --- --- --- --- --- --- --- 7.8 4.9
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time 200 1.0 12 7.4 V ns nC
Min. Typ. Max. Units
51f A showing the
Conditions
MOSFET symbol integral reverse p-n junction diode. TJ = 25C, IS = 17A, VGS = 0V TJ = 25C, IF = 17A, VDD = 13V di/dt = 300A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR8715CPBF
1000
TOP VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.7V
1000
TOP VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.7V
0.1 0.1 1
2.7V 60s PULSE WIDTH Tj = 175C
1 0.1 1 10 100
60s PULSE WIDTH Tj = 25C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 21A VGS = 10V
1.5
100
10
TJ = 175C TJ = 25C
1.0
1
VDS = 15V
0.1 0.0 2.0 4.0
60s PULSE WIDTH
6.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRLR8715CPBF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12 10 8 6 4 2 0
ID= 17A VDS = 20V VDS = 13V VDS = 5.0V
C, Capacitance (pF)
1000
Ciss
Coss Crss
100 1 10 100
0
2
4
6
8
10
12
14
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on) 100sec 1msec
ISD , Reverse Drain Current (A)
100
100
TJ = 175C
10
10
TJ = 25C
1
10msec TC= 25C TJ= 175C
VGS = 0V
1 0.2 0.6 1.0 1.4 1.8 2.2
Single Pulse 0.1 0.1 1 10 100
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR8715CPBF
60 LIMITED BY PACKAGE 50
ID , Drain Current (A)
2.4
VGS(th) Gate threshold Voltage (V)
2.0
40 30 20 10 0 25 50 75 100 125 150 175 TC , Case Temperature (C)
1.6
ID = 25A
1.2
0.8
0.4 -75 -50 -25 0 25 50 75 100 125 150 175
TJ, Temperature ( C )
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4
0.1
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Ri (C/W) (sec) 0.137444 0.00001 0.519232 0.00002 1.553532 0.00034 1.189792 0.001289
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01
0.01 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR8715CPBF
m RDS (on), Drain-to -Source On Resistance ( )
26
120
EAS, Single Pulse Avalanche Energy (mJ)
24 22 20 18 16 14 12 10 8 6 2.0 4.0 6.0
ID = 21A
100
ID 4.1A 6.7A BOTTOM 17A
TOP
80
60
TJ = 125C
40
TJ = 25C
20
8.0
10.0
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 14a. Unclamped Inductive Test Circuit
LD VDS
Fig 14b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRLR8715CPBF
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
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7
IRLR8715CPBF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 2001 IN T HE AS S EMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" "P" in ass embly line position indicates "Lead-Free" qualification to the cons umer-level INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFR120 116A 12 34
DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE
PART NUMBER
IRFR120 12 34
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) P = DES IGNAT ES LEAD-FREE PRODUCT QUALIFIED T O T HE CONS UMER LEVEL (OPT IONAL) YEAR 1 = 2001 WEEK 16 A = AS S EMBLY S IT E CODE
8
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IRLR8715CPBF
Dimensions are shown in millimeters (inches)
TR
D-Pak (TO-252AA) Tape & Reel Information
TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A.
max. junction temperature. Starting TJ = 25C, L = 0.19mH, RG = 25, IAS = 17A. Pulse width 400s; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately at 90C
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/06
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